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november 2006 rev 1 1/13 13 STB200N04 n-channel 40v - 0.0035 ? - 120a - d 2 pa k planar stripfet? power mosfet general features 100% avalanche tested standard threshold drive description this power mosfet is th e latest development of stmicroelectronics unique ?single feature size?? strip-based process. the resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturi ng reproducibility. this new improved device has been specifically designed for automotive applications. applications switching application ? automotive internal schematic diagram type v dss r ds(on) i d p w STB200N04 40v <0.0040 ? 120a 300w 1 3 d2pak www.st.com order codes part number marking package packaging STB200N04 b200n04 d2pak tape & reel
contents STB200N04 2/13 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STB200N04 electrical ratings 3/13 1 electrical ratings table 1. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 40 v v gs gate-source voltage 20 v i d (1) 1. current limited by package drain current (continuous) at t c = 25c 120 a i d (1) drain current (continuous) at t c = 100c 120 a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 480 a p tot total dissipation at t c = 25c 300 w derating factor 2.0 w/c e as (3) 3. starting tj = 25c, i d = 60a, v dd = 25v single pulse avalanche energy 862 mj dv/dt (4) 4. i sd 60a, di/dt 440 a/s, v dd v (br)dss , t j t jmax. peak diode recovery voltage slope 4.2 v/ns t j t stg operating junction temperature storage temperature -55 to 175 c table 2. thermal data symbol parameter value unit rthj-case thermal resistance junction-case max 0.50 c/w rthj-pcb (1) 1. when mounted on fr-4 board, 1inch2 2 oz cu thermal resistance junction-pcb max 35 c/w
electrical characteristics STB200N04 4/13 2 electrical characteristics (t case =25c unless otherwise specified) table 3. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250a, v gs = 0 40 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds = max rating @125c 10 100 a a i gss gate body leakage current (v ds = 0) v gs = 20v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250a 2 4 v r ds(on) static drain-source on resistance v gs = 10v, i d = 80a 0.0035 0.0040 ? table 4. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration=300s, duty cycle 1.5% forward transconductance v ds =10v, i d = 80a 200 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v, f=1 mhz, v gs =0 5100 1270 37 pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =20v, i d = 120a v gs =10v (see figure 13) 75 23 17 nc nc nc
STB200N04 electrical characteristics 5/13 table 5. switching times symbol parameter test conditions min typ max unit t d(on) t r turn-on delay time rise time v dd =20 v, i d =60a, r g =4.7 ?, v gs =10v (see figure 12) 19 180 ns ns t d(off) t f off-voltage rise time fall time v dd =20 v, i d =60a, r g =4.7 ?, v gs =10v (see figure 12) 90 65 ns ns table 6. source drain diode symbol parameter test conditions min typ max unit i sd i sdm source-drain current source-drain current (pulsed) 120 480 a a v sd forward on voltage i sd =120a, v gs =0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =120a, di/dt = 100a/s, v dd =20 v, tj=150c (see figure 17) 67 130 4 ns nc a
electrical characteristics STB200N04 6/13 2.1 electrical characteris tics (curves) figure 1. safe operating area figure 2. thermal impedance figure 3. output characteristics figure 4. transfer characteristics figure 5. normalized b vdss vs temperature figure 6. static drain-source on resistance
STB200N04 electrical characteristics 7/13 figure 7. gate charge vs gate-source voltage figure 8. capacitance variations figure 9. normalized gate threshold voltage vs temperature figure 10. normalized on resistance vs temperature figure 11. source-drain diode forward characteristics
test circuit STB200N04 8/13 3 test circuit figure 12. switching times test circuit for resistive load figure 13. gate charge test circuit figure 14. test circuit for inductive load switching and diode recovery times figure 15. unclamped inductive load test circuit figure 16. unclamped inductive wavefo rm figure 17. switching time waveform
STB200N04 package mechanical data 9/13 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect . the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
package mechanical data STB200N04 10/13 to-247 mechanical data 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r0.4 0.015 v2 0o 4o d 2 pak mechanical data 3
STB200N04 packaging mechanical data 11/13 5 packaging mechanical data tape and reel shipment d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data
revision history STB200N04 12/13 6 revision history table 7. revision history date revision changes 21-nov-2006 1 first release
STB200N04 13/13 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2006 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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